Presentation Information
[8p-PB3-25]Carrier Modulation of Semiconducting Transition Metal Dichalcogenides through Main Group Element Doping
〇(M1)Ayaka Wakabayashi1, Shouhei Yamaguchi1, Hong En Lim1, Keiji Ueno1 (1.Saitama Univ.)
Keywords:
2D Materials,TMDC,FET
In this study, substitutional doping of MoS2 with the typical element indium (In) was investigated for carrier control. Mo1-xInxS2 single crystals were synthesized by the chemical vapor transport (CVT) method, and their FET characteristics were evaluated. XPS measurements confirmed the incorporation of In, while Raman spectroscopy revealed that the crystal structure was preserved after doping. The 3 % In-doped sample exhibited p-type semiconductor behavior, and its output characteristics suggested a reduction in the Schottky barrier height. These results indicate that In doping is an effective approach for controlling the Fermi level of MoS2 while maintaining its crystallinity.