Presentation Information
[8p-PB3-30]Material design of Cold Metal MOSFETs based on two-dimensional MoX2 (X=S, Se, Te)
〇Yukie Kitaoka1, Akiko Ueda1, Hiroshi Imamura1 (1.AIST)
Keywords:
transition metal dichalcogenides,first principles calculations,MOSFET