Presentation Information
[8p-PB3-32]Janusization of Layered InSe Bulk Single Crystals and Thin Films
〇(M1)Shun Muramatsu1, Shouhei Yamaguchi1, Hong En Lim1, Keiji Ueno1 (1.Saitama Univ.)
Keywords:
Janus structure,Indium selenide,2D layered material
We attempted to form a Janus structure by substituting selenium (Se) at the outermost layer of layered InSe with sulfur (S). We annealed bulk InSe and few-layer films in sulfur vapor and evaluated the structural changes by comparing Raman spectroscopy measurements with first-principles calculations. The results revealed peak shifts and new peaks believed to be caused by S substitution, suggesting that a portion of the outermost layer may have been substituted with S. On the other hand, peaks originating from α-In2S3 were observed at temperatures above 290 ℃, suggesting the occurrence of oversulfidation. We are currently working on applying this method to MBE-grown single-layer InSe films.