Presentation Information
[8p-PB3-38]Development of ReRAM based on VSe2 incorporated with Ag
〇Ryota Nishinoue1, Yuta Nakamura1, Mitsuru Inada1, Keiji Ueno2, Mahito Yamamoto1 (1.Kansai Univ., 2.Saitama Univ.)
Keywords:
resistive random access memory,VOx,VSe2
