Presentation Information
[8p-PB3-39]Temperature Dependence of Nonlocal Voltage Arising from the Valley Hall Effect in Bilayer MoS2
〇Takeru Kobayashi1, Yusuke Nakamura1, Yusuke Nakayama1, Peter Kruger1, David Ferry2, Jonathan Bird1,3, Nobuyuki Aoki1 (1.Chiba Univ., 2.Arizona State Univ., 3.SUNY Buffalo)
Keywords:
Transition Metal Dichalcogenide,Valley Hall Effect,Nonlocal Voltage
Transition metal dichalcogenides (TMDCs) have attracted considerable attention as promising materials for valleytronics owing to their unique valley degree of freedom. In this study, we investigated the valley Hall effect (VHE) in bilayer MoS2, where valley current generation is generally considered impossible because of inversion symmetry. Hall-bar-shaped field-effect transistors were fabricated using bilayer MoS2, and nonlocal voltages induced by the VHE were measured. The amplitude of the nonlocal voltage peak exhibited a minimum around 70 K, suggesting that inversion symmetry was most strongly preserved at this temperature. Furthermore, below 40 K, the nonlocal voltage peak split into multiple peaks. These unusual behaviors were systematically examined through their dependences on temperature, gate voltage, magnetic field, and other external parameters, and were discussed from the viewpoint of theoretical calculations.