Presentation Information
[8p-PB3-4]DFT study of mechanism on remote epitaxial growth
〇(M1)Junji Miura1, Insung Seo1, Hiroyuki Kageshima1 (1.Shimane Univ.)
Keywords:
remote epitaxy,DFT calculation,graphene
It is known that certain elemental semiconductors, such as GaAs and GaN, can undergo remote epitaxial growth with one or two layers of graphene sandwiched between them. However, many aspects of the underlying mechanism remain unclear. In this study, we aim to investigate the detailed mechanism of remote epitaxial growth using DFT calculations, taking into account the fact that actual interatomic and intermolecular interactions are determined not only by electrostatic forces but also by quantum mechanical effects.