Presentation Information
[8p-PB3-6]Substrate orientation dependence of h-BN grown on sapphire by CVD
〇TAISEI OZASA1, YOSHIKI HARADA1, HIROKI HIBINO1 (1.Kwansei Gakuin Univ.)
Keywords:
Hexagonal boron nitride
Hexagonal boron nitride (h-BN) possesses excellent electrical insulation and chemical stability, and has attracted attention as a dielectric and substrate for two-dimensional electronics. However, the large-area synthesis of high-quality h-BN remains a challenge. In particular, there is a need to establish direct growth techniques on insulating substrates. In this study, we directly grew h-BN on sapphire substrates with different crystal orientations and investigated the influence of substrate orientation on the structural properties of h-BN.