Presentation Information
[8p-PB3-7]Direct Growth of Multilayer h-BN Films on α-Al2O3(0001) Substrates by CVD
〇(M1)Takeru Nakajima1, Takeshi Watanabe1, Shinji Koh1 (1.Aoyama Gakuin Univ.)
Keywords:
h-BN,Graphene
Graphene exhibits excellent properties such as high carrier mobility and optical transparency. However, its carrier mobility is degraded by the influence of the substrate onto which it is transferred. In this study, we focused on the use of multilayer hexagonal boron nitride (h-BN) films as an underlying layer for graphene to improve carrier mobility. For practical device applications, the fabrication of large-area, highly crystalline h-BN films is essential. Therefore, we investigated the direct growth of h-BN films on alpha-Al2O3(0001) substrates by chemical vapor deposition (CVD), where epitaxial growth of h-BN has previously been reported.