Presentation Information
[9a-A11-2]Synthesis of Cr-doped V2O3 thin films on α-Al2O3 (0112) substrates exhibiting metal-insulator transition at room temperature
〇(M1)Josei Fujiwara1, Akira Ohtomo1, Kohei Yoshimatsu1 (1.Science Tokyo)
Keywords:
transition metal oxides,metal-insulator transition,V2O3
V2O3 exhibits AFI–PM and PM–PI transitions, and the latter can be shifted toward room temperature by Cr doping. However, the PM–PI transition is often suppressed in thin films owing to growth-induced lattice strain. Here, 0.5% Cr-doped V2O3 films were fabricated on α-Al2O3 (0112) substrates by seed-layer-assisted reactive solid-phase synthesis. A ~10 nm crystalline seed layer was deposited at 800 °C, followed by room-temperature deposition of an amorphous precursor and annealing in 1 atm H2 at 800 °C to obtain ~300 nm films. Out-of-plane X-ray diffraction showed that the seed layer promoted films with the same out-of-plane orientation as the substrate, although a 3030 reflection was observed. Resistivity measurements revealed the low-temperature AFI–PM transition and a PM–PI transition near room temperature with an approximately twofold resistivity change. These results indicate that a crystalline seed layer is effective for recovering the PM–PI transition in Cr-doped V2O3 thin films.