[9a-A11-1~9] 6.3 Oxide electronics | The 87th JSAP Autumn Meeting 2026

Advanced Search

Session Details

Oral presentation6 Thin Films and Surfaces : 6.3 Oxide electronics

[9a-A11-1~9]6.3 Oxide electronics

Wed. Sep 9, 2026 9:00 AM - 11:30 AM JST
Wed. Sep 9, 2026 12:00 AM - 2:30 AM UTC

A11 (Faculty of Info. Sci. & Tech. Bldg.)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A11-1]Fabrication and Optical Characterization of Sn-Doped VO₂ Thin Films on Sapphire Substrates

〇(D)Taisei Kano¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A11-2]Synthesis of Cr-doped V₂O₃ thin films on α-Al₂O₃ (0112) substrates exhibiting metal-insulator transition at room temperature

〇(M1)Josei Fujiwara¹, Akira Ohtomo¹, Kohei Yoshimatsu¹ (1.Science Tokyo)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A11-3]Experimental and Simulation Analysis of the Metal Insulator Transition Mechanism in Current Induced Switching of NbO₂ Thin Films

〇(M1)Maya Umezaki¹, Haobo Li^1,2, Hidekazu Tanaka^1,2 (1.SANKEN, The Univ. of Osaka, 2.OTRI, The Univ. of Osaka)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[9a-A11-4]Fabrication and Cryogenic Resistive Switching Characteristics of Sc-doped Amorphous GaOx Crossbar Array Memristors

〇(M2)George Ayoub¹, Sora Obinata^1,2,3, Zhuo Diao¹, Tetsuya Tohei¹, Akira Sakai^2,1 (1.Grad. Sch. Eng. Sci., The Univ. of Osaka, 2.OTRI-The Univ. of Osaka, 3.CSRN, The Univ. of Osaka)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A11-5]Long-term stability of WO3 synaptic devices through proton confinement

〇(M1)Yohito Tateishi¹, Yoshihiro Furue¹, Satoshi Hamasuna¹, Takeaki Yajima¹ (1.ISEE, Kyushu Univ.)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[9a-A11-6]Correlation between Bimodal Grain Size Distribution and Two-Step Metal-Insulator Transition in Sputtered VO₂ Thin Films

〇Akira Hasegawa¹, Hironori Fujisawa¹, Seiji Nakashima¹, Ai Osaka¹ (1.Univ. of Hyogo)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

The 87th JSAP Autumn Meeting 2026

Session Details

[9a-A11-1~9]6.3 Oxide electronics

[9a-A11-1]Fabrication and Optical Characterization of Sn-Doped VO₂ Thin Films on Sapphire Substrates

[9a-A11-2]Synthesis of Cr-doped V₂O₃ thin films on α-Al₂O₃ (0112) substrates exhibiting metal-insulator transition at room temperature

[9a-A11-3]Experimental and Simulation Analysis of the Metal Insulator Transition Mechanism in Current Induced Switching of NbO₂ Thin Films

[9a-A11-4]Fabrication and Cryogenic Resistive Switching Characteristics of Sc-doped Amorphous GaOx Crossbar Array Memristors

[9a-A11-5]Long-term stability of WO3 synaptic devices through proton confinement

[9a-A11-6]Correlation between Bimodal Grain Size Distribution and Two-Step Metal-Insulator Transition in Sputtered VO₂ Thin Films

[9a-A11-7]Fabrication and Crystal Phase Control of VO₂ Microstructures by Mist CVD

[9a-A11-8]Efect of the Crystal Orientation of Nb:TiO₂ Substrates on Metallic Domain Formation in VO₂ Thin Films

[9a-A11-9]Impact of Writing Voltage Pulse Waveform on Current Value Fluctuation in TaO_x-ReRAM

Session Details

[9a-A11-1~9]6.3 Oxide electronics

[9a-A11-1]Fabrication and Optical Characterization of Sn-Doped VO2 Thin Films on Sapphire Substrates

[9a-A11-2]Synthesis of Cr-doped V2O3 thin films on α-Al2O3 (0112) substrates exhibiting metal-insulator transition at room temperature

[9a-A11-3]Experimental and Simulation Analysis of the Metal Insulator Transition Mechanism in Current Induced Switching of NbO2 Thin Films

[9a-A11-4]Fabrication and Cryogenic Resistive Switching Characteristics of Sc-doped Amorphous GaOx Crossbar Array Memristors

[9a-A11-5]Long-term stability of WO3 synaptic devices through proton confinement

[9a-A11-6]Correlation between Bimodal Grain Size Distribution and Two-Step Metal-Insulator Transition in Sputtered VO2 Thin Films

[9a-A11-7]Fabrication and Crystal Phase Control of VO2 Microstructures by Mist CVD

[9a-A11-8]Efect of the Crystal Orientation of Nb:TiO2 Substrates on Metallic Domain Formation in VO2 Thin Films

[9a-A11-9]Impact of Writing Voltage Pulse Waveform on Current Value Fluctuation in TaOx-ReRAM

[9a-A11-1]Fabrication and Optical Characterization of Sn-Doped VO₂ Thin Films on Sapphire Substrates

[9a-A11-2]Synthesis of Cr-doped V₂O₃ thin films on α-Al₂O₃ (0112) substrates exhibiting metal-insulator transition at room temperature

[9a-A11-3]Experimental and Simulation Analysis of the Metal Insulator Transition Mechanism in Current Induced Switching of NbO₂ Thin Films

[9a-A11-6]Correlation between Bimodal Grain Size Distribution and Two-Step Metal-Insulator Transition in Sputtered VO₂ Thin Films

[9a-A11-7]Fabrication and Crystal Phase Control of VO₂ Microstructures by Mist CVD

[9a-A11-8]Efect of the Crystal Orientation of Nb:TiO₂ Substrates on Metallic Domain Formation in VO₂ Thin Films

[9a-A11-9]Impact of Writing Voltage Pulse Waveform on Current Value Fluctuation in TaO_x-ReRAM