[9a-A21-1~11] 13.7 Compound and power devices, process technology and characterization

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-1] Impacts of post-deposition hydrogen annealing temperature on the improvement of
SiC MOS interface properties

〇Satoshi Iga¹, Takuma Kobayashi¹, Masahiro Hara¹, Heiji Watanabe¹ (1.UOsaka)

Keywords:

semiconductor,SiC MOS structures,interface states