[9a-A21-1~11] 13.7 Compound and power devices, process technology and characterization | The 87th JSAP Autumn Meeting 2026

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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[9a-A21-1~11]13.7 Compound and power devices, process technology and characterization

Wed. Sep 9, 2026 9:00 AM - 12:00 PM JST
Wed. Sep 9, 2026 12:00 AM - 3:00 AM UTC

A21 (Faculty of Info. Sci. & Tech. Bldg.)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-1]Impacts of post-deposition hydrogen annealing temperature on the improvement of
SiC MOS interface properties

〇Satoshi Iga¹, Takuma Kobayashi¹, Masahiro Hara¹, Heiji Watanabe¹ (1.UOsaka)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-2]Evaluation of interface properties of hydrogen-annealed SiC MOS structures through C–V measurements over a wide temperature range

〇Shoto Sawada¹, Takuma Kobayashi¹, Satoshi Iga¹, Masahiro Hara¹, Heiji Watanabe¹ (1.UOsaka)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-A21-3]Improvement of both n- and p-channel mobilities in SiC MOSFETs by simultaneous nitridation process

〇Shuya Hiraiwa¹, Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-4]Electrical property of SiC MIS structure formed by SiN deposition and subsequent CO₂ annealing

〇(M2)Hisahiro Itoi^1,2, Takuji Hosoi^1,2 (1.NIMS, 2.Kwansei Gakuin Univ.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-5]Assessment of oxidation suppression during SiO₂ deposition by confocal microscopy observation

〇Yu Kaneko¹, Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.UOsaka)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[9a-A21-6]Formation of Reduced-D_it 4H-SiC MOS Stacks with an Ultrathin Interfacial Layer Thermally Grown by a Low-Temperature and Low-PO₂ Oxidation

〇(D)Hejian Zhou¹, Shunjie Yu¹, Atsushi Tamura¹, Koji Kita¹ (1.Dept. of Adv. Mater. Sci., The Univ. of Tokyo)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-7]Interface State Generation in SiC-MOSFETs under AC Gate Stress Evaluated by Charge Pumping Method

〇(M2)Tsuyoshi Hidaka¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-8]Negative Threshold Voltage Shift and Its Channel-Length dependence in n-Chennel SiC MOSFETs under AC Gate Stress

〇(M2)Aoi Koyasu¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-9]A Report on Temperature-dependent Hysteresis in Output Capacitance of SiC MOSFETs

〇Taiki Nishioka¹, Hajime Takayama¹, Kazutaka Kanegae¹, Hiroyuki Nishinaka¹, Michihiro Shintani¹ (1.Kyoto Inst. of Tech.)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-10]Suppression of the Long-Term Component of Threshold Voltage Shift under AC stress

〇Ryuki Momota¹, Mitsuru Sometani², Hirohisa Hirai², Heiji Watanabe³, Takanori Isobe¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tskuba, 2.AIST, 3.UOsaka)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-11]Demonstration of Mobility Enhancement in SiC P-Channel FinFETs

〇Shion Toshimitsu¹, Eiji Kagoshima², Hirokazu Fujiwara², Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.MIRISE Technologies Corp.)

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