[9a-A21-1~11] 13.7 Compound and power devices, process technology and characterization

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-11] Demonstration of Mobility Enhancement in SiC P-Channel FinFETs

〇Shion Toshimitsu¹, Eiji Kagoshima², Hirokazu Fujiwara², Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.MIRISE Technologies Corp.)

Keywords:

silicon carbide,FinFET,mobility

The SiC p-channel FinFETs with fin widths (W_fin) of 71–558 nm are fabricated, demonstrating mobility enhancement with decreasing the W_fin for the first time. The field-effect mobility at an overdrive voltage of 15 V takes a maximum at W_fin = 105 nm, which is about 1.4 times that at W_fin = 558 nm. To physically understand the mobility improvement, the hole states in 4H-SiC n-channel FinFETs were theoretically analyzed. The average distance of holes from the interface exhibits a peak of about 4.2 nm at W_fin = 80 nm, which is about 2.2 times larger than that for {1-100} planar MOSFETs (about 1.9 nm).