[9a-A21-1~11] 13.7 Compound and power devices, process technology and characterization

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-2] Evaluation of interface properties of hydrogen-annealed SiC MOS structures through C–V measurements over a wide temperature range

〇Shoto Sawada¹, Takuma Kobayashi¹, Satoshi Iga¹, Masahiro Hara¹, Heiji Watanabe¹ (1.UOsaka)

Keywords:

SiO2/SiC Interface