[9a-A21-1~11] 13.7 Compound and power devices, process technology and characterization

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-A21-3] Improvement of both n- and p-channel mobilities in SiC MOSFETs by simultaneous nitridation process

〇Shuya Hiraiwa¹, Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:

SiC,MOSFET,mobility