[9a-A21-1~11] 13.7 Compound and power devices, process technology and characterization

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-4] Electrical property of SiC MIS structure formed by SiN deposition and subsequent CO₂ annealing

〇(M2)Hisahiro Itoi^1,2, Takuji Hosoi^1,2 (1.NIMS, 2.Kwansei Gakuin Univ.)

Keywords:

semiconductor