[9a-A21-1~11] 13.7 Compound and power devices, process technology and characterization

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A21-9] A Report on Temperature-dependent Hysteresis in Output Capacitance of SiC MOSFETs

〇Taiki Nishioka¹, Hajime Takayama¹, Kazutaka Kanegae¹, Hiroyuki Nishinaka¹, Michihiro Shintani¹ (1.Kyoto Inst. of Tech.)

Keywords:

SiC MOSFETs,Output Capacitance,Hysteresis

In recent years, hysteresis observed during the charging and discharging of the output capacitance in SiC MOSFETs has been reported, with the involvement of oxide interface traps being suggested; however, the underlying mechanism remains unclear. In this study, the transient response delay of charge during large-signal pulse excitation was measured, and its temperature dependence was evaluated. The activation energy extracted from the time constants of the transient response waveforms is consistent with values reported in previous studies, indicating that gate oxide interface defects are a likely primary cause of the observed hysteresis.