Presentation Information

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-10]Development of Laser-Processed Thin-Film Transistors with 2D Semiconductors

〇Aoto Igarashi^1,2, Ryosuke Imura^1,2, Kentaro Uzawa^1,2, Ryoma Hayakawa¹, Takuya Iwasaki¹, Kenji Watanabe¹, Takashi Taniguchi¹, Takeo Minari¹, Yasumitsu Miyata¹, Takahiko Endo¹, Satoshi Moriyama^1,2, Yutaka Wakayama^1,2 (1.NIMS, 2.TDU)

Keywords:

Molybdenum sulfide,Laser patterning,Chemical vapor deposition

In this study, we report on the effectiveness process for fabricating two-dimensional devices, in which CVD-grown large scale MoS₂ films are processed by laser irradiation. After transferring the CVD-grown MoS₂ thin films on an h-BN/HfO₂ dielectric layer, a MoS₂ flake was patterned using an Nd:YAG laser to form well-defined transistor channel. Thus-prepared channel was contacted with Ti/Au electrodes and transistor properties were measured. As a result, we confirmed n-type transistor characteristics those are an ON/OFF ratio of 10⁶and a subthreshold voltage of 145 mV/dec.

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