The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Applications

[9a-A33-1~13]17.3 Applications

Wed. Sep 9, 2026 9:00 AM - 12:30 PM JST
Wed. Sep 9, 2026 12:00 AM - 3:30 AM UTC
A33 (Faculty of Info. Sci. & Tech. Bldg.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-1]Automatic 2D semiconductor heterostructures fabrication assisted by robotic technology

〇Atsushi Kishida1, Wataru Idehara1, Kenji Watanabe2, Takashi Taniguchi2, Shinichiro Matano1, Kazunari Matsuda1 (1.Kyoto Univ., 2.NIMS)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-2]Enhancement of MoS2 local channel mobility to 186 cm2/Vs by contact-metal-induced tensile strain

〇KEISUKE ATSUMI1, TOMONORI NISHIMURA1, KAITO KANAHASHI1, YOSHIKI SAKUMA2, KOSUKE NAGASHIO1 (1.University of Tokyo, 2.National Institute for Materials Science)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-A33-3]MoS2 conductivity enhancement by contact-metal-induced tensile strain toward short-channel-FETs integration

〇KEISUKE ATSUMI1, TOMONORI NISHIMURA1, KAITO KANAHASHI1, NAOYA OKADA2, IRISAWA TOSHIFUMI2, YOSHIKI SAKUMA3, KOSUKE NAGASHIO1 (1.University of Tokyo, 2.AIST, 3.NIMS)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-4]Mirror Twin Boundary Reduction and Degenerate p-Type FET Operation in Nb-Post-Doped Monolayer WSe2 through Se-Atmosphere Activation Annealing

〇Itsuki Tanaka1, Tomonori Nishimura1, Kaito Kanahashi1, Mai Nakashima2, Naoshi Kakeya2, Kohei Aso2, Yoshifumi Oshima2, Ryotaro Sakakibara3, Yasumitsu Miyata3, Koji Kita1, Kouske Nagashio1 (1.UTokyo, 2.JAIST, 3.NIMS)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[9a-A33-5]High-Concentration n-Type Substitutional Doping of MoS2 by Re Post-Doping

〇Masanori Yamaguchi1, Ituki Tanaka2, Kaito Kanahashi1, Tomonori Nishimura1, Mai Nakashima3, Kohei Aso3, Yoshifumi Oshima3, Yoshiki Sakuma4, Kosuke Nagashio1 (1.UTokyo, 2.UTokyo GSFS, 3.JAIST, 4.NIMS)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-6]Feasibility study of ultra-thin gate metal layers using graphene

〇Yuto Noguchi1, Taiki Seto1, Mengnan Ke2, Shohei Kumagai3, Toshihiro Okamoto3, Nobuyuki Aoki1 (1.Chiba Univ., 2.Yokohama National Univ., 3.Science Tokyo)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-7]Threshold Voltage Control and Atomic Layer Deposition on n-Type MoS2 MOSFET via F6-TCNNQ Monolayers for CFET Device Application

〇Taiki Seto1, Yuto Noguchi1, Kensho Matsuda1, Mengnan Ke2, Shohei Kumagai3, Toshihiro Okamoto3, Nobuyuki Aoki1 (1.Chiba Univ., 2.Yokohama National Univ., 3.Science Tokyo Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-8]Observation of Gate-Modulated Threshold Switching in a Graphene/MoTe2/Graphene Vertical Heterostructure

〇(D)Kentarou Uzawa1,2, Keisuke Kobayashi1,2, Ryoma Hayakawa2, Takuya Iwasaki2, Kenji Watanabe2, Takashi Taniguchi2, Yutaka Wakayama1,2, Satoshi Moriyama1,2 (1.Tokyo Denki Univ., 2.NIMS)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-9]Contact Engineering of TMDC-Channel Transistors Using Silicide Materials

〇Tetsuhiko Tanikawa1,2, Chang Wen-Hsin1, Nishino Ryutaro1, Irisawa Toshifumi1, Okada Naoya1 (1.SFRC, AIST, 2.Nihon Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-10]Development of Laser-Processed Thin-Film Transistors with 2D Semiconductors

〇Aoto Igarashi1,2, Ryosuke Imura1,2, Kentaro Uzawa1,2, Ryoma Hayakawa1, Takuya Iwasaki1, Kenji Watanabe1, Takashi Taniguchi1, Takeo Minari1, Yasumitsu Miyata1, Takahiko Endo1, Satoshi Moriyama1,2, Yutaka Wakayama1,2 (1.NIMS, 2.TDU)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-11]Gas Atmosphere Dependence of Photomodulated Current in Monolayer MoS2

〇(M2)Kosei Tokuda1, Osamu Maida1, Hiroshi Tabata1 (1.UOsaka)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-12]Strain and Symmetry Engineering in Atomically-Thin Chiral Light-Emitting Devices

〇Tenta Kitamura1, Haruto Yoshida1, Takahiko Endo2, Mina Maruyama3, Yanlin Gao3, Susumu Okada3, Hiroo Suzuki4, Yasuhiko Hayashi4, Yasumitsu Miyata2, Shun Fujii5, Hao Ou1, Jiang Pu1 (1.Science Tokyo, 2.NIMS, 3.Univ. of Tsukuba, 4.Okayama Univ, 5.Keio Univ)
12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-13]Ion-gel-gated tunnel light-emitting device with van der Waals heterostructures

〇Soto Hiramatsu1, Tenta Kitamura1, Peishan Yu1, Takahiko Endo2, Kenji Watanabe3, Takashi Taniguchi2, Yasumitsu Miyata2, Hao Ou1, Pu Jiang1 (1.Science Tokyo, 2.NIMS-MANA, 3.NIMS-EOM)
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