[9a-A33-1~13] 17.3 Applications

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-12] Strain and Symmetry Engineering in Atomically-Thin Chiral Light-Emitting Devices

〇Tenta Kitamura¹, Haruto Yoshida¹, Takahiko Endo², Mina Maruyama³, Yanlin Gao³, Susumu Okada³, Hiroo Suzuki⁴, Yasuhiko Hayashi⁴, Yasumitsu Miyata², Shun Fujii⁵, Hao Ou¹, Jiang Pu¹ (1.Science Tokyo, 2.NIMS, 3.Univ. of Tsukuba, 4.Okayama Univ, 5.Keio Univ)

Keywords:

Transition Metal Dichalcogenide,Chiral Light-Emitting Devices,Strain Engineering

It has been proposed that the symmetry of monolayer transition metal dichalcogenides (TMDCs) can be controlled via strain to manipulate circularly polarized light. However, conventional methods face challenges regarding device stability and versatility, and the strain-induced control of circularly polarized emission remains insufficiently verified both experimentally and theoretically. In this study, we fabricated devices with localized strain on Si/SiO2 substrates and elucidated the correlation between symmetry and circular polarization control. By introducing approximately 2% strain using electrode steps, we achieved a polarization degree of about 20% and demonstrated polarization switching via voltage, establishing a highly versatile circularly polarized light-emitting device.