[9a-A33-1~13] 17.3 Applications

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-13] Ion-gel-gated tunnel light-emitting device with van der Waals heterostructures

〇Soto Hiramatsu¹, Tenta Kitamura¹, Peishan Yu¹, Takahiko Endo², Kenji Watanabe³, Takashi Taniguchi², Yasumitsu Miyata², Hao Ou¹, Pu Jiang¹ (1.Science Tokyo, 2.NIMS-MANA, 3.NIMS-EOM)

Keywords:

Transition Metal Dichalcogenides,Heterostructure

We propose a two-terminal electroluminescent device incorporating an ion gel into an atomically thin van der Waals heterostructure, enabling simultaneous control of carrier doping and tunneling injection through hBN. We observed tunneling current at low voltage and achieved clear room-temperature emission over the stacked region. Furthermore, Fowler–Nordheim analysis accounting for the interfacial electric-field distribution indicated an effective reduction of the tunneling barrier through electrostatic potential control.