Presentation Information
[9a-A33-2]Enhancement of MoS2 local channel mobility to 186 cm2/Vs by contact-metal-induced tensile strain
〇KEISUKE ATSUMI1, TOMONORI NISHIMURA1, KAITO KANAHASHI1, YOSHIKI SAKUMA2, KOSUKE NAGASHIO1 (1.University of Tokyo, 2.National Institute for Materials Science)
Keywords:
MOCVD,Mobility,Strain
2D material FETs are susceptible to tensile strain in the channel due to the thermal history associated with metal evaporation. In monolayer MoS2, tensile strain is expected to enhance the channel mobility because it reduces the electron effective mass. Experimentally, however, improvements in device characteristics induced by contact-metal-induced strain have been discussed only interms of Schottky barrier modulation based on two-terminal measurements.
In this presentation, we fabricated multi-terminal devices using MOCVD-grown single-crystalline MoS2 and observe a maximum four-probe mobility of 186 cm2/Vs using voltage probes placed near the contact metals. The results indicate that the utilization of contact-metal-induced strain is a promising strategy for further improving the performance of 2D material FETs.
In this presentation, we fabricated multi-terminal devices using MOCVD-grown single-crystalline MoS2 and observe a maximum four-probe mobility of 186 cm2/Vs using voltage probes placed near the contact metals. The results indicate that the utilization of contact-metal-induced strain is a promising strategy for further improving the performance of 2D material FETs.