[9a-A33-1~13] 17.3 Applications

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-A33-3] MoS₂ conductivity enhancement by contact-metal-induced tensile strain toward short-channel-FETs integration

〇KEISUKE ATSUMI¹, TOMONORI NISHIMURA¹, KAITO KANAHASHI¹, NAOYA OKADA², IRISAWA TOSHIFUMI², YOSHIKI SAKUMA³, KOSUKE NAGASHIO¹ (1.University of Tokyo, 2.AIST, 3.NIMS)

Keywords:

short channel,TLM,conductivity

MOCVD is apromising technique for the wafer-scale synthesis of uniform TMDC films. We observed an enhancement in the local 4-probe mobility up to 186 cm²/Vs enhanced by contact-metal-induced tensile strain in MOCVD-grown single-crystalline MoS₂ films. At sub-micrometer channel lengths, a further enhancement of the channel conductance is expected owing to stronger contact-metal-induced strain. In this study, we evaluate the enhancement of the channel conductance in the short-channel-length regime.