[9a-A33-1~13] 17.3 Applications

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-A33-4] Mirror Twin Boundary Reduction and Degenerate p-Type FET Operation in Nb-Post-Doped Monolayer WSe₂ through Se-Atmosphere Activation Annealing

〇Itsuki Tanaka¹, Tomonori Nishimura¹, Kaito Kanahashi¹, Mai Nakashima², Naoshi Kakeya², Kohei Aso², Yoshifumi Oshima², Ryotaro Sakakibara³, Yasumitsu Miyata³, Koji Kita¹, Kouske Nagashio¹ (1.UTokyo, 2.JAIST, 3.NIMS)

Keywords:

two-dimensional material,TMDC,doping

Degenerate p-type doping is essential for forming low-resistance contacts in monolayer WSe₂, but Nb post-doping induces Mirror Twin Boundary (MTB) loops that hinder hole supply. In this talk, we show that 800 °C Se-atmosphere annealing after ~9% Nb incorporation reduces MTB density and restores Raman peaks. FETs further exhibit ohmic behavior and weakly temperature-dependent transport, demonstrating degenerate p-type operation.