Presentation Information
[9a-A33-7]Threshold Voltage Control and Atomic Layer Deposition on n-Type MoS2 MOSFET via F6-TCNNQ Monolayers for CFET Device Application
〇Taiki Seto1, Yuto Noguchi1, Kensho Matsuda1, Mengnan Ke2, Shohei Kumagai3, Toshihiro Okamoto3, Nobuyuki Aoki1 (1.Chiba Univ., 2.Yokohama National Univ., 3.Science Tokyo Univ.)
Keywords:
CFET,TMDC,F6TCNNQ
TMDCs are two-dimensional materials with finite band gaps, offering strong immunity to short-channel effects and great potential for highly integrated devices. However, stable doping techniques have not yet been established. Previous studies have demonstrated that F6-TCNNQ deposited on WSe2 induces p-type doping, improves contact properties, and enables Al2O3 deposition. On the other hand, unintended n-type doping from ALD-grown Al2O3 shifts the threshold voltage to the negative side, degrading pMOS characteristics.
In addition, carrier mobility decreased after F6-TCNNQ and UV–O3 treatments, suggesting the influence of defect introduction and increased contact resistance.
Based on these findings, a CFET structure with MoS2 nMOS placed in the bottom layer was designed and fabricated, demonstrating effective suppression of process-induced degradation and improved threshold voltage control.
In addition, carrier mobility decreased after F6-TCNNQ and UV–O3 treatments, suggesting the influence of defect introduction and increased contact resistance.
Based on these findings, a CFET structure with MoS2 nMOS placed in the bottom layer was designed and fabricated, demonstrating effective suppression of process-induced degradation and improved threshold voltage control.