[9a-B11-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[9a-B11-11] Image processing of X-ray topographs for β-Ga₂O₃(001) substrates using X-ray film

〇daiki katsube¹, Motoyuki Shimizu², Yoshio Ohashi², Yongzhao Yao^1,3, Hirotaka Yamaguchi¹, Daisaku Yokoe¹, Yukari Ishikawa¹ (1.JFCC, 2.Toyota Tsusho Co., 3.Mie Univ.)

Keywords:

X-ray topography,beta-Ga2O3,dislocation