The 87th JSAP Autumn Meeting 2026
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9a-B11-1~14]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2026 9:00 AM - 12:45 PM JST
Wed. Sep 9, 2026 12:00 AM - 3:45 AM UTC
B11 (Faculty of Engineering B Block)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[9a-B11-1]Growth of Cu-doped β-Ga2O3 crystals using FZ method and investigation of sintering temperature for feed rods

〇(M1)SoShi Usui1, Masanori Nagao1, Yuki Maruyama1, Satoshi Watauchi1 (1.Yamanashi Univ.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[9a-B11-2]Growth of β-Ga2O3 single crystals using the floating zone method

〇Kazune Anai1, Masanori Nagao1, Satoshi Watauchi1, Yuki Maruyama1 (1.Yamanashi Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-B11-3]3D analysis of temperature, stress and dislocation densities in Ga2O3 crystals grown by CZ method

〇Koichi Kakimoto1, Taketoshi Tomida2, Vladimir Kochurikhin2, Masanori Kitahara2, Kei Kamada2,1, Rikito Murakami1, Satoshi Nakano3, Yongzhao Yao4, Akira Yoshikawa1,2 (1.NICHe, Tohoku Univ., 2.C & A co., 3.RIAM, Kyushu Univ., 4.Mie Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[9a-B11-4]Bulk crystal growth of β-Ga2O3 by melt scale up in the OCCC method

〇Taketoshi Tomida1,2, Vladimir Kochurikhin2, Liudmila Gushchina2, Masanori Kitahara1,2,4, Rikito Murakami3, Kei Kamada3,1,2, Yongzhao Yao5, Koichi Kakimoto3, Akira Yoshikawa1,2,3,4 (1.FOX Corp., 2.C&A Corp., 3.NICHe Tohoku Univ., 4.IMR Tohoku Univ., 5.Mie Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[9a-B11-5]Evaluation and Crystal growth of 3 inchβ-Ga2O3 with OCCC method

〇Masanori Kitahara1,2,3, Vladimir Kochurikhin3, Gushchina Liudmila3, Taketoshi Tomida2,3, Rikito Murakami4, Yasuhiro Shoji2, Kei Kamada2, Koichi Kakimoto4, Yongzhao Yao5, Akira Yoshikawa1,2,3,4 (1.IMR, Tohoku Univ., 2.FOX Corp., 3.C&A Corp., 4.NICHe, Tohoku Univ., 5.Mie Univ.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[9a-B11-6]Evaluation of crystal quality and dislocation structures in OCCC-grown β-Ga2O3

〇Yongzhao Yao1,2, Koki Mizuno1, Kazuki Ohnishi1, Yukari Ishikawa2, Masanori Kitahara3,4, Taketoshi Tomida3, Rikito Murakami4, Vladimir Kochurikhin3, Liudmila Gushchina3, Kei Kamada3,5, Koichi Kakimoto5, Akira Yoshikawa3,4,5 (1.Mie Univ., 2.JFCC, 3.C&A, 4.IMR, Tohoku Univ., 5.NICHe, Tohoku Univ.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[9a-B11-7][The 60th Young Scientist Presentation Award Speech] Current Challenges and Future Prospects for Growth of β-Ga2O3 Single Crystals Using EFG Method

〇Sho Hasegawa1, Kimiyoshi Koshi1, Yuki Ueda1, Kohei Sasaki1, Ryoichi Sakaguchi1, Isao Sakamoto1, Keita Konishi1, Makoto Mizui1, Yu Yamaoka1, Shinya Watanabe1, Akito Kuramata1 (1.NCT)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-B11-8]Demonstration of 4-inch β-Ga2O3 crystal growth by pulling-down EFG method with a raw material supply system

〇Yuki Ueda1, Kimiyoshi Koshi1, Sho Hasegawa1, Kohei Sasaki1, Akito Kuramata1 (1.NCT)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[9a-B11-9]Three-dimensional visualization of lattice defects in β-Ga2O3 crystals using synchrotron X-ray topo-tomography (Part II)

〇Yongzhao Yao1,2, Daiki Katsube2, Hirotaka Yamaguchi2, Shinya Yamaguchi3, Daiki Wakimoto3, Hironobu Miyamoto3, Yukari Ishikawa2 (1.Mie Univ., 2.JFCC, 3.Novel Crystal Technology)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[9a-B11-10]Observation of dislocations in (011)-oriented vertical Bridgman β-Ga2O3 substrates

〇Yongzhao Yao1,2, Daiki Katsube2, Hirotaka Yamaguchi2, Yukari Ishikawa2 (1.Mie Univ., 2.JFCC)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[9a-B11-11]Image processing of X-ray topographs for β-Ga2O3(001) substrates using X-ray film

〇daiki katsube1, Motoyuki Shimizu2, Yoshio Ohashi2, Yongzhao Yao1,3, Hirotaka Yamaguchi1, Daisaku Yokoe1, Yukari Ishikawa1 (1.JFCC, 2.Toyota Tsusho Co., 3.Mie Univ.)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[9a-B11-12]Crystallinity evaluation of homoepitaxial β-Ga2O3 layers using a high-precision EBSD analysis method

〇Daisaku Yokoe1, Yongzhao Yao1,2, Maki Shimizu1, Yukari Ishikawa1 (1.JFCC, 2.Mie Univ.)
12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[9a-B11-13]Sub-resolution detection of nanoscale surface defects in beta-Ga2O3 by phase-contrast microscopy

〇Yukari Ishikawa1, Koji Sato1 (1.JFCC)
12:30 PM - 12:45 PM JST(3:30 AM - 3:45 AM UTC)

[9a-B11-14]Development of 150 mm-diameter Ga2O3 epitaxial wafer by MOCVD

〇Andreas LiudiMulyo1, Badari Narayana Rao1, Yudai Shimizu2, Hiroki Tokunaga2, Keitaro Ikejiri2, Chia-Hung Lin1, Kohei Sasaki1, Akito Kuramata1 (1.Novel Crystal Technology, Inc., 2.Nippon Sanso Corp.)
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