Presentation Information
[9a-B11-13]Sub-resolution detection of nanoscale surface defects in beta-Ga2O3 by phase-contrast microscopy
〇Yukari Ishikawa1, Koji Sato1 (1.JFCC)
Keywords:
surface topography,phase-contrast microscopy,detection limit
In wafer quality inspection, it is desirable that a single characterization technique can simultaneously detect not only dislocations but also surface topography defects such as scratches and pits. In this study, the detection limits of surface topography defects remaining on beta-Ga2O3 wafer surfaces were evaluated by both model experiments and theoretical calculations using phase-contrast microscopy. The results demonstrated that even surface features smaller than the diffraction limit of the objective lens can be detected by phase-contrast microscopy.