Presentation Information
[9a-B11-14]Development of 150 mm-diameter Ga2O3 epitaxial wafer by MOCVD
〇Andreas LiudiMulyo1, Badari Narayana Rao1, Yudai Shimizu2, Hiroki Tokunaga2, Keitaro Ikejiri2, Chia-Hung Lin1, Kohei Sasaki1, Akito Kuramata1 (1.Novel Crystal Technology, Inc., 2.Nippon Sanso Corp.)
Keywords:
semiconductor,Ga2O3,MOCVD
Beta-Ga2O3, with its ultra-wide bandgap (4.5–4.8 eV) and high breakdown field (8 MV/cm), is a promising semiconductor for power electronics and solar-blind UV photodetectors. To further advance the practical deployment of beta-Ga2O3 devices, we demonstrate homoepitaxial growth on 150 mm beta-Ga2O3 wafers by metal-organic chemical vapor deposition (MOCVD). Growth was performed in a horizontal low-pressure hot-wall MOCVD reactor using trimethylgallium and O2 as precursors and Ar as the carrier gas. The VI/III ratio, substrate temperature, total gas flow rate, and growth pressure were set to 520, 1000 °C, 20,400 sccm, and 2.5 kPa, respectively. The resulting epitaxial wafer exhibited a mirror-like surface. FTIR measurements revealed an average epilayer thickness of 5.3 μm with a wafer-scale thickness variation of 1.3%, corresponding to a growth rate of approximately 2.6 μm/h. These results demonstrate excellent thickness uniformity across the entire 150 mm wafer.