Presentation Information
[9a-B11-2]Growth of β-Ga2O3 single crystals using the floating zone method
〇Kazune Anai1, Masanori Nagao1, Satoshi Watauchi1, Yuki Maruyama1 (1.Yamanashi Univ.)
Keywords:
Gallium oxide,Crystal growth
Al-doped β-Ga2O3 single crystals were grown by the floating zone (FZ) method to improve the thermal conductivity of β-Ga2O3, which is a critical issue for power device applications. Phase separation was observed when the nominal Al composition exceeded 60 at%, whereas Al was suggested to be incorporated into the β-Ga2O3 lattice at compositions of 50 at% or lower. Furthermore, orientation-controlled Al-doped β-Ga2O3 single crystals were successfully grown using seed crystals. The anisotropy of their thermal conductivity was evaluated, and the results will be presented at the conference.