[9a-B11-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[9a-B11-2] Growth of β-Ga₂O₃ single crystals using the floating zone method

〇Kazune Anai¹, Masanori Nagao¹, Satoshi Watauchi¹, Yuki Maruyama¹ (1.Yamanashi Univ.)

Keywords:

Gallium oxide,Crystal growth

Al-doped β-Ga₂O₃ single crystals were grown by the floating zone (FZ) method to improve the thermal conductivity of β-Ga₂O₃, which is a critical issue for power device applications. Phase separation was observed when the nominal Al composition exceeded 60 at%, whereas Al was suggested to be incorporated into the β-Ga₂O₃ lattice at compositions of 50 at% or lower. Furthermore, orientation-controlled Al-doped β-Ga₂O₃ single crystals were successfully grown using seed crystals. The anisotropy of their thermal conductivity was evaluated, and the results will be presented at the conference.