[9a-B11-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-B11-3] 3D analysis of temperature, stress and dislocation densities in Ga₂O₃ crystals grown by CZ method

〇Koichi Kakimoto¹, Taketoshi Tomida², Vladimir Kochurikhin², Masanori Kitahara², Kei Kamada^2,1, Rikito Murakami¹, Satoshi Nakano³, Yongzhao Yao⁴, Akira Yoshikawa^1,2 (1.NICHe, Tohoku Univ., 2.C & A co., 3.RIAM, Kyushu Univ., 4.Mie Univ.)

Keywords:

semiconductor,Ga2O3,simulation

We studied distributions of the stress and dislocation density in Ga₂O₃ by using 3D analysis. This paper includes the effect of transparency of the crystal and the melt on the distributions.