Presentation Information
[9a-B11-5]Evaluation and Crystal growth of 3 inchβ-Ga2O3 with OCCC method
〇Masanori Kitahara1,2,3, Vladimir Kochurikhin3, Gushchina Liudmila3, Taketoshi Tomida2,3, Rikito Murakami4, Yasuhiro Shoji2, Kei Kamada2, Koichi Kakimoto4, Yongzhao Yao5, Akira Yoshikawa1,2,3,4 (1.IMR, Tohoku Univ., 2.FOX Corp., 3.C&A Corp., 4.NICHe, Tohoku Univ., 5.Mie Univ.)
Keywords:
gallium oxide,semiconductor,crystal
In pursuit of substrate enlargement for practical device applications, we conducted beta-Ga2O3 crystal growth using the oxide crystal growth from cold crucible (OCCC) method with a 150 mm water-cooled basket and high-purity (99.99%) source material. Multiple growth runs successfully yielded transparent beta-Ga2O3single crystals with diameters approaching 3 inches. The crystallinity of the obtained crystals was evaluated through rocking-curve mapping, which confirmed uniformly high crystal quality across the entire wafer area. These results demonstrate the feasibility of scaling beta-Ga2O3 bulk growth toward larger diameters while maintaining structural uniformity by leveraging the contamination-free and crucible-less advantages of the OCCC method. Detailed characterization of the 3-inch crystals, including crystallographic properties and physical parameters relevant to device applications, will be presented at the conference.