[9a-B11-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-B11-8] Demonstration of 4-inch β-Ga₂O₃ crystal growth by pulling-down EFG method with a raw material supply system

〇Yuki Ueda¹, Kimiyoshi Koshi¹, Sho Hasegawa¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

Keywords:

Ga2O3,Bulk crystal,melt growth