[9a-E218-1~10] 13.8 Optical properties and light-emitting devices

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-E218-1] Si-Doped Conductive Thin Films of Far-red Phosphor Zn(Ga, In)₂O₄:Cr³⁺

〇(M2)Misuke Maruyama^1,2, Takeru Sugimoto^1,3, Takemi Yamamoto^1,2, Tomoki Abe^1,3, Koutoku Ohmi^1,2 (1.Tottori Univ., 2.Densibutsuri Lab., 3.Hikarihandoutai Lab.)

Keywords:

ZnGa2O4:Cr3+,phosphor,thin film

We are focusing on ZnGa₂O₄:Cr³⁺, which emits far-infrared light around 700 nm, with the aim of applying it as lighting for plant cultivation. Although the addition of In improved the luminescence properties of both powder and thin-film samples, no conductivity was observed in the thin-film samples. Therefore, to improve the conductivity of the thin-film samples, we added Si, which acts as a donor, in addition to the original In, with the aim of achieving conductivity in the thin-film samples.