The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.8 Optical properties and light-emitting devices

[9a-E218-1~10]13.8 Optical properties and light-emitting devices

Wed. Sep 9, 2026 9:00 AM - 11:45 AM JST
Wed. Sep 9, 2026 12:00 AM - 2:45 AM UTC
E218 (First Year Education Bld. E Block)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-E218-1]Si-Doped Conductive Thin Films of Far-red Phosphor Zn(Ga, In)2O4:Cr3+

〇(M2)Misuke Maruyama1,2, Takeru Sugimoto1,3, Takemi Yamamoto1,2, Tomoki Abe1,3, Koutoku Ohmi1,2 (1.Tottori Univ., 2.Densibutsuri Lab., 3.Hikarihandoutai Lab.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-E218-2]Effects of carbon addition of Cr2O3-Na2O-CaO-GeO2 near-infrared glass ceramic phosphor

〇Moe Suzukawa1, Yasushi Nanai1, Seiya Shimono2, Nobuaki Kitazawa1 (1.National Defense Academy, 2.JASRI)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-E218-3]Effects of Be Substitution on Luminescence Properties in Sr2MgSi2O7:Eu,Dy Phosphors

〇(DC)Jumpei Kamikawa1, Ayumu Otaki2, Nobuhisa Fujima1,2, Hiroko Kominami1,2, Kazuhiko Hara1,2,3 (1.GSST, Shizuoka Univ., 2.GSIST, Shizuoka Univ., 3.RIE, Shizuoka Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[9a-E218-4]Infrared luminescence characteristics of rare-earth ion doped strontium aluminate phosphors

〇Yuta Obara1, Nakamura Toshihiro1 (1.Hosei Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[9a-E218-5]Polarized Luminescence Property of LaBSiO5 : Ln phosphor

〇Kazuro Kizaki1, Tang Haoyi1, Kotaro Kanegae1, Takashige Omatsu2,3,1,4, Madoka Ono1 (1.Tohoku Univ., 2.Serendip Research Lab, 3.National Yang Ming Chiao Tung Univ., 4.Osaka Metropolitan Univ.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[9a-E218-6]Fabrication of Water dispersible Silicon Quantum Dots via Ultrasonication-Based Cracking approach

〇Junpei Tsuneyama1, Shota Sasaki1, Yuta Naito1, Nobuyoshi Koshida1,2, Toshihiro Nakamura1 (1.Hosei Univ., 2.Tokyo Univ. of A&T)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-E218-7]Fabrication of colloidal silicon dot via chemical etching assist cracking of porous silicon

〇Shota Sasaki1, Nobuyoshi Koshida1,2, Toshihiro Nakamura1 (1.Hosei Univ., 2.Tokyo Univ. of A&T)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[9a-E218-8]Luminescence color tuning of silicon quantum dots fabricated by chemical etching of porous silicon and gel permeation chromatography

〇Eriha Nochimoto1, Sasaki Shota1, Koshida Nobuyoshi1,2, Nakamura Toshihiro1 (1.Hosei Univ., 2.Tokyo Univ. of A&T)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[9a-E218-9]Improvement of the Photoluminescence Stability of Green-Emitting Colloidal Si Quantum Dot by Radical Initiator Addition

〇RYOMA OGAWA1, Nobuyoshi Koshida1,2, Toshihiro Nakamura1 (1.Hosei Univ., 2.Univ. of A&T)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[9a-E218-10]Fabrication of Multi-Color Silicon Quantum dot based Electrochemiluminescence Device with Redox Mediator

〇Rikuto Tanaka1, Nobuyoshi Koshida2, Takashi Kasahara1, Nakamura Toshihiro1 (1.Hosei Univ., 2.Tokyo Univ.)
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