[9a-N101-1~11] 15.4 III-V-group nitride crystals

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N101-3] Evaluation of electrical characteristics of AlGaN-based UV-B LDs with p-Al_0.45Ga_0.55N contact layer

〇(M1)Kenta Kitagawa¹, Takumu Saito¹, Rintaro Miyake¹, Naoki Kitta¹, Seiya Kato¹, Ryota Watanabe¹, Yuma Miyamoto¹, Shion Kamiya¹, Tomoya Tanikawa¹, Rintaro Kobayashi¹, Sho Iwayama¹, Yasuo Koide¹, Hideto Miyake², Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

Keywords:

AlGaN laser,Semiconductor laser,p-type AlGaN

In this study, we investigated the reduction of internal optical loss and electrical resistance to improve the performance of AlGaN-based UV-B laser diodes (LDs). Specifically, the application of a p-Al_0.45Ga_0.55N contact layer was examined. Although a higher AlN mole fraction raises concerns regarding increased contact resistance, optimizing the electrode formation conditions successfully yielded favorable I-V characteristics comparable to or better than conventional structures. This approach demonstrates the potential to mitigate the design trade-offs among internal optical loss, device resistance, and contact resistance.