Presentation Information

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-N101-7]Impact of n-type AlN/AlGaN superlattice cladding layer thickness on AlGaN LD characteristics

〇Kazuaki Ebata¹, Kazuyuki Hirama¹, Yoshitaka Taniyasu¹ (1.NTT BRL)

Keywords:

AlGaN,Laser,n-type cladding layer

AlGaN UV laser diodes (LDs) with Si-doped AlN/AlGaN superlattice n-type cladding layers were fabricated to investigate the effect of cladding layer thickness on LD characteristics. Increasing the cladding layer thickness reduced the series resistance and operating voltage, and improved stimulated-emission characteristics near 280 nm. These results indicate that increased n-type cladding layer thickness is effective for improving AlGaN LD characteristics.

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