Presentation Information
[9a-PB2-14]Atmospheric-Pressure Plasma Oxidation of Cobalt Thin Films Using N2–O2 Plasma
〇Kai Takemura1, Keigo Takeda1 (1.Meijo Univ.)
Keywords:
semiconductor,cobalt oxide,atmospheric-pressure plasma
Co oxide films can be fabricated relatively easily using a thermal oxidation process of Co films under a temperature-controlled atmosphere at 400–600 °C, and the structure and electrical properties of Co oxides produced by this process have been reported previously. In this study, we attempted to fabricate Co oxide films at lower temperatures using atmospheric-pressure oxygen plasma and evaluated their properties.