[9a-PB2-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[9a-PB2-15] Dynamic control of reactive species balance in SF6/O2 plasma for Si etching

〇(M2)Ibuki Kawano¹, Shuto Tsuchioka¹, Kenichi Inoue², Takayoshi Tsutsumi², Kenji Ishikawa² (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS)

Keywords:

SF6/O2 Plasma,Reactive ion etching,Through Silicon Via

In high-aspect-ratio (HAR) si etching, anomalous profiles such as bowing can occur due to changes in reactive-species transport as the etch depth increases. In this study, the mechanism of profile formation in SF6/O2 plasma etching was investigated through a combination of simulations using PEGASUS and ViennaPS and experimental validation. The results revealed the relationship between the transport gradient of the O/F flux ratio within HAR structures and the occurrence of bowing. Furthermore, the potential for suppressing anomalous profiles through dynamic control of the reactive-species balance was examined.