[9a-PB2-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[9a-PB2-2] Effect of process pressure on deposition of nitrogen-doped titanium dioxide thin films using plasma sputtering

〇(M1)Ryusuke Goto¹, Keigo Takeda¹ (1.Meijo Univ.)

Keywords:

semiconductor photocatalyst,sputtering deposition,pressure dependence

Nitrogen-doped titanium dioxide is a highly functional photocatalytic material that can absorb light in the visible region, and reactive sputtering is generally used in the film formation process. In such a plasma process, understanding the influence of reactive species inside the plasma on surface reactions is important, and the state of the reactive species is strongly affected by the process pressure. In this study, N-doped titanium dioxide thin films were deposited under process pressure conditions that change the state of reactive species, and their properties were evaluated.