Presentation Information
[9a-PB2-6]Surface Reactions on DLC Films Induced by High Density Plasma Irradiation
〇(M1)Sohta Kumagai1, Keigo Takeda1 (1.Meijo Univ.)
Keywords:
diamond,microwave plasma-enhanced chemical vapor deposition,semiconductor
Diamond, owing to its excellent thermal conductivity and high breakdown electric field, is considered a promising material for next-generation power semiconductor devices. However, achieving a high diamond nucleation density on Si substrates remains a significant challenge. Recent studies have reported that non-diamond carbon and carbide phases contribute to diamond nucleation. Therefore, in this study, a diamond-like carbon (DLC) film deposited on a Si substrate was irradiated with high-density microwave plasma, and the surface reactions and diamond nucleation behavior on the DLC film were investigated.