Presentation Information
[9a-PB2-8]Assessment of Deposition Conditions on Bond Configurations of a-C:H films deposited using Plasma CVD
〇Soichiro Yoshida1, Shinjiro Ono1, Shunpei Ohara1, Takamasa Okumura1, Kunihiro Kamataki1, Kazunori Koga1, Masaharu Shiratani1 (1.Kyushu Univ.)
Keywords:
semiconductor,CVD
Hydrogenated amorphous carbon (a-C:H) films are widely used as protective layers in dry etching processes, and achieving high density with low stress remains an important challenge. In this study, the bonding structure of a-C:H films deposited by plasma-enhanced chemical vapor deposition using cumene (C9H12) and acetylene precursors was investigated by Raman spectroscopy. The effects of precursor species, gas pressure, discharge frequency, and substrate bias voltage on film structure were systematically evaluated. Film density increased with increasing ion bombardment and reached a maximum value of approximately 2.1 g/cm3, followed by a decrease at higher bias conditions. Comparison with Raman parameters, including ID/IG and G-band full width at half maximum (FWHM_G), suggests that variations in film density are closely related to changes in the carbon bonding structure. The relationship between film density and carbon structure formation will be discussed in detail.