Presentation Information
[9a-S1-5]Quantitative Understanding of High-Ns Mobility in (100) Si n-MOSFETs at 4 K
〇Shinichi Takagi1, Kei Sumita2, Zhao Jin2, Yutong Chen2, Hiroshi Oka3, Takahiro Mori3, Mitsuru Takenaka2, Kasidit Toprasertpong2 (1.Teikyo Univ., ACRO, 2.The Univ. Tokyo, 3.AIST)
Keywords:
MOSFET,mobility,scattering mechanism
The operation of Si MOSFETs near 4 K has attracted significant attention for quantum computing applications, and a quantitative understanding of mobility is required for appropriate circuit design. In this study, we verified whether existing scattering models can reproduce the Ns dependence of mobility at 4 K. We found that combining Coulomb scattering with surface roughness scattering suppresses the excessive increase in mobility of 4-fold valley electrons in the high-Ns region, thereby accurately reproducing the experimental Ns dependence of Si n-MOSFET mobility at 4 K.