The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[9a-S1-1~9]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Wed. Sep 9, 2026 9:00 AM - 11:15 AM JST
Wed. Sep 9, 2026 12:00 AM - 2:15 AM UTC
S1 (First Year Education S Bldg.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[9a-S1-1]Analysis of Current Transport Mechanism on “GCCI SOI-Tr”

〇kyouichiro Suzuki1, Haruki Yonezaki1,2, Takayuki Mori1, Jiro Ida1 (1.Kanazawa Inst. of Tech., 2.KIOXIA Corp.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[9a-S1-2]Demonstration of Near-Zero Forward-Voltage Operation in a PNBT Diode

〇Shion Hyuga1, Moeka Ohsone1, Kotarou Yanagawa1, Mori Takayuki1, Jiro Ida1 (1.Kanazawa Inst. of Tech.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-S1-3]Estimation of Electron-Phonon Interaction using Maximally Localized Wannier Functions in Silicon Nanosheets

〇Hikaru Horii1, Akiko Ueda1, Yoshihiro Hayashi1 (1.AIST)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[9a-S1-4]TCAD Simulation of Spin Qubits Using a GAA Transistor

〇Tetsufumi Tanamoto1, Keiji Ono2 (1.Teikyo Univ., 2.Riken)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[9a-S1-5]Quantitative Understanding of High-Ns Mobility in (100) Si n-MOSFETs at 4 K

〇Shinichi Takagi1, Kei Sumita2, Zhao Jin2, Yutong Chen2, Hiroshi Oka3, Takahiro Mori3, Mitsuru Takenaka2, Kasidit Toprasertpong2 (1.Teikyo Univ., ACRO, 2.The Univ. Tokyo, 3.AIST)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[9a-S1-6]Characteristics of Mobility Limited by Coulomb Scattering due to MOS Interface Charges in Si n-MOSFETs at Cryogenic Temperatures

〇Zhao Jin1, Yutong Chen1, Hiroshi Oka2, Takahiro Mori2, Mitsuru Takenaka1, Shinichi Takagi3, Kasidit Toprasertpong1 (1.Univ. of Tokyo, 2.AIST, 3.Teikyo Univ.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)English Presentation

[9a-S1-7]Surface Orientation Dependence of Interface Trap Density Reduction by Annealing in Si/SiO2 Interfaces

〇(D)Yutong Chen1, Ryotaro Shimura1, Koji Matsumoto2, Akihiro Suzuki2, Hiroaki Yamamoto2, Kazuto Matsukawa2, Mitsuru Takenaka1, Shinichi Takagi3, Kasidit Toprasertpong1 (1.Univ. Tokyo, 2.SUMCO, 3.Teikyo Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-S1-8]Direct observation of electron capture processes in amphoteric defect states achieved by
charge pumping in individual defects at MOS interface (19) -Universal CP method-

〇Toshiaki Tsuchiya1, Masahiro Hori1, Yukinori Ono1 (1.Shizuoka Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-S1-9]Evaluation of Interface Properties Using Charge Pumping at Cryogenic Temperatures

〇Wataru Miyagi1, Kazuki Watanabe1, Keito Yoshinaga1, Michinasa Morita1, Ryo Toyoshima1, Ken Uchida1 (1.Tokyo Univ.)
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