[9a-S1-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-S1-8] Direct observation of electron capture processes in amphoteric defect states achieved by
charge pumping in individual defects at MOS interface (19) -Universal CP method-

〇Toshiaki Tsuchiya¹, Masahiro Hori¹, Yukinori Ono¹ (1.Shizuoka Univ.)

Keywords:

single interface-defects,universal charge-pumping method,capture cross section

We propose a universal charge pumping (U-CP) method that allows the total number of interface traps present within the entire bandgap to be derived from the maximum CP current, I_CPMAX, measured at room temperature, using I_CPMAX/fq. This method can be applied regardless of the sample, such as differences in device structural parameters.