[9a-S1-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-S1-9] Evaluation of Interface Properties Using Charge Pumping at Cryogenic Temperatures

〇Wataru Miyagi¹, Kazuki Watanabe¹, Keito Yoshinaga¹, Michinasa Morita¹, Ryo Toyoshima¹, Ken Uchida¹ (1.Tokyo Univ.)

Keywords:

CryoCMOS,Interface traps,Charge pumping method

Interface characterization of MOSFETs at cryogenic temperatures is crucial for quantum computing applications. In this study, charge pumping (CP) current was successfully measured at cryogenic temperatures using a p-i-n FD-SOI MOSFET. The measurement frequency ranged from 10 kHz to 1 MHz. The CP current was found to decrease from 150 K to 50 K and then increase at lower temperatures. The physical origin of this temperature dependence will be discussed.