[9p-A21-1~15] 13.7 Compound and power devices, process technology and characterization

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[9p-A21-11] Characteristics Evaluation of SiC JFET Differential Amplifier Under High Temperature

〇Daisuke Watanabe^1,2, Takuya Matsunaga^1,2, Masayuki Yamamoto^1,2, Hitoshi Umezawa¹, Takahide Sato², Shin-Ichiro Kuroki³, Yasunori Tanaka¹ (1.AIST, 2.Univ. of Yamanashi, 3.Hiroshima Univ.)

Keywords:

4H-SiC,High Temperature,Differential Amplifier

In this study, the frequency characteristics of a differential amplifier circuit using SiC JFETs were evaluated at temperatures ranging from room temperature to 300°C. The results showed that the DC gain gradually decreased as the temperature increased. This is thought to be due to changes in the JFET's transfer characteristics with temperature, leading to a decrease in transconductance. Meanwhile, the cutoff frequency remained unchanged.