[9p-A21-1~15] 13.7 Compound and power devices, process technology and characterization | The 87th JSAP Autumn Meeting 2026

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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[9p-A21-1~15]13.7 Compound and power devices, process technology and characterization

Wed. Sep 9, 2026 2:00 PM - 6:00 PM JST
Wed. Sep 9, 2026 5:00 AM - 9:00 AM UTC

A21 (Faculty of Info. Sci. & Tech. Bldg.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-A21-1]Impact of Electron Irradiation on Channel and Drift Regions in SiC MOSFET

〇(M1)Yuto Ogawa¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-A21-2]Effects of Electron Beam Irradiation on Interface Properties of SiC-MOS Capacitors

〇(M2)Soma Furuya¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[9p-A21-3]SiC MOSFET with SiC / SiO₂ interfaces nitrided by the hot-wire method

〇Tomoki Oku¹, Kohei Nishiguchi¹, Masahiro Totsuka¹, Yasuyuki Nakagawa¹, Tomokatsu Watanabe¹ (1.Mitsubishi Electric)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[9p-A21-4]Decoupling Effective Field, Screening, and Temperature Dependences of Inversion Layer Mobility in SiC MOSFETs

〇Tetsuo Hatakeyama¹, Hirohisa Hirai², Mitsuru Sometani², Mitsuo Okamoto² (1.Toyama Pref. Univ., 2.AIST)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-A21-5]First-principles analysis of SiO₂/SiC interface defects: A comparison with SiC bulk defects

〇(D)Sosuke Iwamoto¹, Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.UOsaka)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-A21-6]Calculation of electronic states in 4H-Si inversion layer based on the tight-binding model fo conduction band of 4H-SiC

〇Sachika Nagamizo¹, Nobuya Mori¹ (1.Osaka Univ.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[9p-A21-7]EDMR spectroscopy on conduction-band-side interface states of 4H-SiC(0001) MOSFETs induced by Fowler-Nordheim stress

〇Bunta Shimabukuro¹, Keigo Adachi¹, Mitsuru Sometani², Hirohisa Hirai², Heiji Watanabe³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.Univ. of Osaka)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[9p-A21-8]Evaluation of Martens-Type Time Constants in 4H-SiC MOS Capacitors by Multi-Frequency Admittance Analysis

〇Dai Okamoto¹, Mitsuru Sometani² (1.Toyama Pref. Univ., 2.AIST)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[9p-A21-9]Etching of 4H-SiC by Reactive Atmospheric-pressure Thermal Plasma Jet

〇Shoma sy Yamamoto¹, Jiawen Yu¹, Hiroaki Hanafusa¹, Seichiro Higashi¹ (1.Hiroshima Univ)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-A21-10]Investigation of Body pin Diodes in SiC MOSFETs Fabricated on Bonded Substrates

〇(M2)Tomohiro Baba¹, Hiroshi Yano¹, Noriyuki Iwamuro¹ (1.Univ. of Tsukuba)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[9p-A21-11]Characteristics Evaluation of SiC JFET Differential Amplifier Under High Temperature

〇Daisuke Watanabe^1,2, Takuya Matsunaga^1,2, Masayuki Yamamoto^1,2, Hitoshi Umezawa¹, Takahide Sato², Shin-Ichiro Kuroki³, Yasunori Tanaka¹ (1.AIST, 2.Univ. of Yamanashi, 3.Hiroshima Univ.)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-A21-12]Analysis of On-Resistance Components in SiC MOSFETs and Their Structural Dependence on Short-Circuit Ruggedness

〇(M1)So Uchiyama¹, Hiroshi Yano¹, Noriyuki Iwamuro¹ (1.Univ. of Tsukuba)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-A21-13]High Temperature Operation of 4H-SiC Active Pixel Sensor

〇Yusuke Hata¹, Tatsuya Meguro¹, Akinori Takeyama², Takeshi Ohshima², Kazutoshi Kojima³, Yasunori Tanaka³, Tomonori Maeda^1,4, Hiroshi Sezaki^1,4, Shin-Ichiro Kuroki¹ (1.RISE, Hiroshima Univ, 2.QST, 3.AIST, 4.Phenitec Semiconductor Co., Ltd)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[9p-A21-14]Predicting Projectile Atomic Number Dependence of Electronic Stopping Cross Sections along 4H-SiC <11-23> Direction

〇Kazuhiro Mochizuki¹, Tomoaki Nishimura¹, Tomoyoshi Mishima¹, Fumimasa Horikiri¹, Hiroshi Ohta^1,2 (1.Hosei Univ., 2.Devise Tech Inc.)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-A21-15]Analog ReRAM Based on Single-Crystal 4H-SiC and Its Operating Mechanism

〇(M1C)Haru Takayama¹, Yumeng Zheng¹, Kinoshita Kentaro¹ (1.Tokyo Univ. of Sci.)

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