[9p-A21-1~15] 13.7 Compound and power devices, process technology and characterization

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-A21-13] High Temperature Operation of 4H-SiC Active Pixel Sensor

〇Yusuke Hata¹, Tatsuya Meguro¹, Akinori Takeyama², Takeshi Ohshima², Kazutoshi Kojima³, Yasunori Tanaka³, Tomonori Maeda^1,4, Hiroshi Sezaki^1,4, Shin-Ichiro Kuroki¹ (1.RISE, Hiroshima Univ, 2.QST, 3.AIST, 4.Phenitec Semiconductor Co., Ltd)

Keywords:

Silicon Carbide,Image Sensor,High Temperature

Silicon carbide (SiC) is focused as a semiconductor material for high temperature electronics. In this study, 4H-SiC Active Pixel Sensor (APS) fabricated with 4H-SiC, a polymorph of SiC, and the operation was demonstrated up to 300°C. For measurement, devices were irradiated UV light at a wavelength of 320 nm to confirm photoresponse characteristics of APS. The intensity of UV was 20 μW/cm². The voltage difference between the reset potential and the potential after light irradiation reflects the light intensity. The value of voltage difference was 0.39 V at room temperature and 0.53 V at 300°C. It could be concluded that the voltage deference was increased by thermal excitation and a shift in the threshold voltage due to the high temperature.