[9p-A21-1~15] 13.7 Compound and power devices, process technology and characterization

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[9p-A21-14] Predicting Projectile Atomic Number Dependence of Electronic Stopping Cross Sections along 4H-SiC <11-23> Direction

〇Kazuhiro Mochizuki¹, Tomoaki Nishimura¹, Tomoyoshi Mishima¹, Fumimasa Horikiri¹, Hiroshi Ohta^1,2 (1.Hosei Univ., 2.Devise Tech Inc.)

Keywords:

silicon carbide,ion implantation,electronic stopping cross section